⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文提出了一款90nm工艺下12ns访问时间的32Mb 2T1MTJ MRAM，通过改进单元占用率和局部电流沉电路解决了远距离写入电流衰减问题。
Y. Kato1, K. Mori1, Y. Ozaki2, Y. Kobayashi2, N. Ohshima1, K. Kinoshita1, T. Suzuki1, K. Nagahara1, N. Ishiwata1, K. Suemitsu1, S. Fukami1, H. Hada1, T. Sugibayashi1, N. Kasai1 NEC, Sagamihara, Japan, 2NEC Electronics, Sagamihara, Japan improving the cell occupation ratio. However, the conducting current through the memory cell decreases at a location far from the write driver because of the resistance of the write bitlines. To reduce parasitic resistance of the sink side, our previously published local-current-sink circuits are arranged between each sub-array. The current-sink circuits suppress the decrease of the conducting current, but the suppression is not sufficient when a boosted wordline technique is used. 1 Since MRAM cells have unlimited write endurance, they can be used as substitutes for DRAMs or SRAMs. MRAMs in electronic appliances enhance their convenience and energy efficiency because data in MRAMs are nonvolatile
R. Nebashi1, N. Sakimura1, H. Honjo1, S. Saito1, Y. Ito2, S. Miura1,