⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文提出了一款128Mb链式铁电存储器(Chain FeRAM)，采用可扩展的八位线(Octal Bitline)和传感方案，实现了1.6GB/s的DDR2接口速率，旨在替代传统DRAM。通过创新的位线和链式架构，解决了FeRAM在容量和速度上的局限性。
Hoya, Tadashi Miyakawa, Ryu Ogiwara, Ryo Fukuda, Ryosuke Takizawa, Kosuke Hatsuda, Fumiyoshi Matsuoka, Yasushi Nagadomi, Daisuke Hashimoto, Hisaaki Nishimura, Takeshi Hioka, Sumiko Doumae, Shoichi Shimizu, Mitsumo Kawano, Toyoki Taguchi, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Yoshinori Kumura, Yoshiro Shimojo, Yuki Yamada, Yoshihiro Minami, Susumu Shuto, Koji Yamakawa, Souichi Yamazaki, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama, Tohru Furuyama Toshiba, Yokohama, Japan An application that takes advantage of FeRAM characteristics is replacing current DRAM, which then becomes high-performance nonvolatile RAM cache. This improves system performance for many kinds of computer systems, including mobile PCs, cellular phones, digital video products, and storage systems such as SSDs. However, the highest capacity in nonvolatile RAMs that allow frequent cache reads and writes is limited to 64Mb [1,2]. The
Hidehiro Shiga, Daisaburo Takashima, Shinichiro Shiratake, Katsuhiko