A 1.1V 150GHz Amplifier with 8dB Gain and +6dBm Saturated Output Power in Standard Digital 65nm CMOS Using Dummy-Prefilled Microstrip Lines

📋 论文概要

本文首次在标准数字65nm CMOS工艺中实现了150GHz放大器，通过使用dummy-prefill技术来应对金属密度规则对无源元件特性的影响，成功保留了晶体管的高频增益。该放大器在1.1V电源电压下实现了8dB增益和+6dBm饱和输出功率，为100GHz以上无线通信、医学成像和化学传感器等应用提供了CMOS解决方案。

💡 主要创新点

• 首次在65nm数字CMOS工艺中实现150GHz放大器。
• 提出dummy-prefill技术，在不违反金属密度规则的前提下保持晶体管的高频增益特性。

🏷 关键词

📄 原文摘要

Luis Chen1, C. Patrick Yue1, Mark Rodwell1 University of California, Santa Barbara, CA IBM, Burlington, VT 3 IBM, Crolles, France 1 2 Radio applications beyond 100GHz that will benefit from silicon technologies [1-5] include high-rate communication links, medical imaging systems, and chemical sensors. Challenges in CMOS mm-wave front-ends include low available transistor gain and strict metal density rules which alter passive element characteristics [1, 2, 5, 6]. This paper presents the first 150GHz amplifier in a digital 65nm CMOS technology. Design techniques to preserve raw transistor gain near fmax include layout optimization, dummy-prefilled microstrip lines (MSL) for design-rule compliance, and matching topologies which minimize passive element losses. To the authors’ knowledge, the measured 8.3dB gain, 6.3dBm saturated output power (Psat), 1.5dBm P1dB, 25.5mW DC dissipation (PDC), and 27GHz 3dB

👥 作者与机构

Munkyo Seo1, Basanth Jagannathan2, Corrado Carta1, John Pekarik3,