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该论文提出了一种基于Si/SiGe工艺的级联建构波放大器拓扑，实现了100GHz工作频率和26dB增益，解决了W波段硅集成电路的带宽和增益限制问题。
The availability of W-band (75 to 111GHz) silicon integrated circuits will potentially revolutionize medical and security imaging, as well as high-capacity wireless communications. Traditional W-band circuits rely on GaAs or InP devices, but recent work demonstrates silicon front-ends for W-band imaging and communications [1,2], although the low intrinsic bandwidth of silicon devices presents performance limits compared to III-V processes. At millimeter-wave frequencies, new challenges exist for silicon wideband circuits [3-5]. In this work, an amplifier topology - the Cascaded Constructive-Wave Amplifier (CCWA) - that combines features of traveling-wave and cascaded amplifiers for millimeter-wave applications is presented. The CCWA topology is shown in Fig. 29.3.1, and is based on the cascade of identical traveling-wave stages. These stages support forward and backward traveling waves since the input and output are electrically connected through
James F. Buckwalter, Joohwa Kim
University of California, San Diego, CA