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ISSCC 2009Session 4 · HIGH-SPEED DATA CONVERTERSData Converters65nm CMOS

A 5b 800MS/s 2mW Asynchronous Binary-Search ADC in 65nm CMOS

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📋 论文概要

该论文提出了一种5位800MS/s的异步二进制搜索ADC,采用65nm CMOS工艺,功耗仅2mW。它解决了传统flash ADC功耗大、面积大和SAR ADC转换速度慢的问题,实现了高速低功耗的模数转换。

💡 主要创新点

核心指标
5b, 800MS/s, 2mW
工艺节点
65nm CMOS
重要性
发表年份
ISSCC 2009

🏷 关键词

异步二进制搜索ADC低功耗高速转换65nm CMOS

📄 原文摘要

low-power high-speed ADCs to convert RF/IF signals into digital form for subsequent baseband processing. Considering latency and conversion speed, flash ADCs are often the most preferred option. Generally, flash ADCs suffer from high power consumption and large area overhead. On the contrary, SAR ADCs have low power dissipation and occupy a small area. However, a SAR ADC needs several comparison cycles to complete one conversion, which limits its conversion speed. The highest single-channel operation speed of previously reported SAR ADCs is 625MS/s [1]. The ADC in [1] utilizes a 2b/step structure. For non-multi-bit/step SAR ADCs, the highest reported conversion rate is 300MS/s [2]. The structure of a comparator-based binary-search ADC is between that of flash and SAR ADCs [3]. Compared to a

👥 作者与机构

Ying-Zu Lin, Soon-Jyh Chang, Yen-Ting Liu, Chun-Cheng Liu, Guang-Ying Huang

National Cheng-Kung University, Tainan, Taiwan Digital wireless communication applications such as UWB and WPAN necessitate

分类:Data Converters · 年份:ISSCC 2009