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ISSCC 2009Session 6 · CELLULAR AND TUNERRF & Wireless45nm CMOS

A 45nm Low-Power SAW-less WCDMA Transmit Modulator Using Direct Quadrature Voltage Modulation

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📋 论文概要

该论文提出了一种采用直接正交电压调制的低功耗无SAW WCDMA发射调制器,解决了FDD系统中TX噪声对RX路径的干扰问题,实现了在45nm CMOS工艺下的低噪声和高线性度。

💡 主要创新点

工艺节点
45nm CMOS
重要性
发表年份
ISSCC 2009

🏷 关键词

WCDMA发射调制器直接正交电压调制低功耗无SAW

📄 原文摘要

In FDD systems such as WCDMA and LTE, TX and RX operate simultaneously, while the duplexer provides the necessary isolation between them. In order not to desensitize the RX path, the TX noise in WCDMA band 1 has to be lower than -155dBc/Hz at 190MHz offset (RX band), given a 45dB TX-to-RX isolation from the duplexer [1]. Furthermore, when transmitting at 1920MHz, the nearest frequency offset to the DCS band (1805 to 1880MHz) is 40MHz. At this offset typical WCDMA duplexers only offer a few dB of attenuation. To comply with the 3GPP emissions mask, the TX noise at -40MHz offset is expected be lower than -148dBc/Hz (with 3dB margin). Currently there is a growing demand to integrate WCDMA and GPS applications in the same mobile device. In order not to interfere with the GPS receiver, the far-out noise floor of the WCDMA TX is also desired to be very low. Figure 6.5.1 shows the conventional Cartesian transmitter using active current

👥 作者与机构

Xin He, Jan van Sinderen

NXP Semiconductors, Eindhoven, Netherlands

分类:RF & Wireless · 年份:ISSCC 2009