A SiGe BiCMOS 16-Element Phased-Array Transmitter for 60GHz Communications gy. A stand-alone single-element breakout has a measured 60GHz OP1dB that can vary from +3dBm to +15dBm with a nearly constant peak PAE of 9%.

📋 论文概要

本文提出了一种用于60GHz通信的16元件相控阵发射机，基于SiGe BiCMOS工艺。该发射机在片上进行全特性表征，实现了相移360度范围内输出功率变化控制在+/-1dB以内。通过两个相邻元件同时探测和外部合路，验证了相位扫描性能。

💡 主要创新点

• 实现了16元件相控阵发射机用于60GHz通信，采用SiGe BiCMOS工艺。
• 通过片上测试验证了各元件间输出功率高度一致性，在360度相移内变化控制在+/-1dB。

🏷 关键词

📄 原文摘要

Ping-Yu Chen3, Scott Reynolds1, Jing-Hong Conan Zhan3, Brian Floyd1 The Tx has been fully characterized on-wafer. The output power from an individual element is measured, for CW input, for different phase (and corresponding gain) settings. This experiment is repeated across 7 adjacent elements. The resulting polar plot in Fig. 11.3.3 indicates that the output power variation across 360º of phase and adjacent elements can be limited to +/-1dB. Two adjacent elements are then probed simultaneously and their outputs are summed in an external output combiner. The phase of one element is swept 360º while keeping the other constant and the aggregated output power is measured. This procedure is repeated for 7 different pairs of elements on the right side of the IC and the results are shown in Fig. 11.3.3 (the output power is normalized to the output power from a single element). In all cases the output signals combine with

👥 作者与机构

Alberto Valdes-Garcia1, Sean Nicolson2, Jie-Wei Lai3, Arun Natarajan1,