A 0.13µm 64Mb Multi-Layered Conductive MetalOxide Memory

📋 论文概要

本文提出了一种基于导电金属氧化物（CMOx）技术的多层非易失可重写存储器，在0.13µm工艺上实现了64Mb容量，旨在替代NAND Flash。通过多层堆叠提高存储密度，解决了传统闪存缩放困难的问题。

💡 主要创新点

• 采用导电金属氧化物（CMOx）电阻存储单元，支持多层物理层堆叠，显著提高存储密度。
• 实现了非易失、可重写的多层存储器，克服了早期非可重写材料的限制。

🏷 关键词

📄 原文摘要

Sri Rama Namala, Misako Matsuoka, Bruce L Bateman, Darrell Rinerson Unity Semiconductor, Sunnyvale, CA A number of technologies have been proposed to replace NAND Flash as scaling becomes more difficult [1-2]. One promising area includes resistive memories using the conductive metal oxide (CMOxTM) technology where multiple memory layers can be stacked [3]. Earlier attempts have been made with non-rewritable materials [4]. The key concepts for a very high density, multi physical layer nonvolatile, rewritable memory have been developed on a 64Mb, 130 nm test chip. The memory cell is formed by stacking an insulating oxide material on top of a conductive oxide material which functions as a Variable Height Tunnel Barrier. The IV curve shown in Fig. 14.3.1 indicates a non-linear characteristic that enables the building of a true crosspoint array. Since the memory is built on top of the CMOS circuitry, the periphery circuitry can reside underneath the memory array to improve array efficiency

👥 作者与机构

Christophe J Chevallier, Chang Hua Siau, Seow Fong Lim,