A Scalable Shield-Bitline-Overdrive Technique for 1.3V Chain FeRAM

📋 论文概要

论文提出了一种可扩展的屏蔽位线过驱动技术，用于实现1.3V低电压操作的Chain FeRAM，解决了传统FeRAM在低电压下读取速度慢的问题，提升了存储系统的性能。

💡 主要创新点

• 提出屏蔽位线过驱动技术，通过屏蔽位线降低噪声并增强驱动能力，实现低电压操作。
• 该技术具有可扩展性，适用于不同工艺节点和容量规模的Chain FeRAM设计。

🏷 关键词

📄 原文摘要

Tadashi Miyakawa, Shinichiro Shiratake, Katsuhiko Hoya, Ryu Ogiwara, Ryosuke Takizawa, Sumiko Doumae, Ryo Fukuda, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Susumu Shuto, Koji Yamakawa, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama Toshiba, Yokohama, Japan A ferroelectric RAM, especially Chain FeRAMTM [1], can boost the performance of memory systems such as HDD and SSD. Chain FeRAM can be used as a nonvolatile RAM cache in these memory systems, improving effective write bandwidth by minimizing the frequency of seeks to disk [2] and program/erase access to NAND flash memory [3]. A 128Mb Chain FeRAM with DDR2 interface has been previously developed [4]. However, the memory systems require further improvement to reach memory capacity of 256Mb while operating with a lower voltage of 1.3V to meet DDR3/LPDDR2 interface requirements and to accommodate device scaling. We demonstrate a ferroelectric capacitor overdrive

👥 作者与机构

Daisaburo Takashima, Hidehiro Shiga, Daisuke Hashimoto,