A 90nm 4Mb Embedded Phase-Change Memory with 1.2V 12ns Read Access Time and 1MB/s Write Throughput

📋 论文概要

本文实现了一款90nm工艺的4Mb嵌入式相变存储器（PCM），在1.2V电压下实现了12ns的读取访问时间和1MB/s的写入吞吐量。该设计解决了嵌入式PCM的读写性能与功耗问题，可与嵌入式闪存技术竞争。

💡 主要创新点

• 在90nm工艺下实现了12ns快速读取访问时间，适用于嵌入式应用。
• 采用1.2V低电压操作，平均功耗仅20mA（3.3V电源），实现1MB/s写入吞吐量包括ECC开销。
• 通过优化重置操作（reset）与闪存编程对应，提供了与嵌入式闪存性能的比较基准。

📄 原文摘要

Marco Pasotti1, Massimo Borghi1, Paolo Mattavelli1, Paola Zuliani1, Luca Scotti1, Gianfranco Mastracchio1, Ferdinando Bedeschi2, Roberto Gastaldi2, Roberto Bez2 1 STMicroelectronics, Agrate Brianza, Italy Numonyx, Agrate Brianza, Italy throughput of 1MB/s including ECC bits, was measured, as shown in Fig. 14.7.5a, with an average power consumption of about 20mA from the 3.3V supply. However, to obtain a fair comparison with embedded Flash technology, the reset throughput should be separately considered, as there is an exact correspondence between Flash program and PCM reset operations. It is assumed that a slow set sweep initializes the whole array into the low resistance state, as in a Flash erase. Subsequently a reset is performed, within a 3-steps P&V scheme, corresponding to the reset phase only in Fig. 14.7.5a. With the same consumption as in the previous case, a worst case reset throughput of 4MB/s was

👥 作者与机构

Guido De Sandre1, Luca Bettini1, Alessandro Pirola1, Lionel Marmonier1,