A 45nm 1Gb 1.8V Phase-Change Memory

📋 论文概要

论文介绍了一款采用45nm工艺、1Gb容量、1.8V供电的相变存储器。通过单元位置补偿系统、字线补偿和位线补偿技术，有效减少了寄生效应，实现了稳定的编程操作。

💡 主要创新点

• 提出单元位置补偿系统，通过添加电阻路径使所有存储单元具有相同的等效寄生电阻值。
• 根据行地址设置编程负载电压的位线补偿方法，进一步优化编程精度。

🏷 关键词

📄 原文摘要

voltage depending on the device configuration. In the voltage-forcing approach, a cell-position-compensation system is implemented to reduce the parasitic effect. The WL compensation is based on adding a resistive path to ensure that all the cells have the same equivalent parasitic resistance value. The BL compensation sets the program load voltage depending on the row address. 2 Floating-gate Flash memories have been able so far to satisfy the market requirements, especially for the portable equipments, and to be the mainstream nonvolatile memory (NVM) technology [1]. Projecting into the next decade, though, there are several limitations that must be faced to further scale the floating-gate concept. The increasing complexity of floating gate scaling has left room for the

👥 作者与机构

Corrado Villa1, Duane Mills2, Gerald Barkley2, Hari Giduturi2,

Stefan Schippers1, Daniele Vimercati1 1 Numonyx, Agrate Brianza, Italy Numonyx, Folsom, CA The program load is able to inject a current or force a