⚡ 本页包含 AI 生成的分析内容,仅供参考
提出一种针对8T SRAM的PVT和老化自适应字线升压技术,用于降低功耗。通过动态调整字线电压,补偿工艺、电压、温度变化及老化效应,在保持性能的同时减少功耗。
19.6.1) is commonly used in single-VCC microprocessor core for its performance critical low-level caches and multi-ported register-file arrays
Arijit Raychowdhury, Bibiche Geuskens, Jaydeep Kulkarni,
Jim Tschanz, Keith Bowman, Tanay Karnik, Shih-Lien Lu, Vivek De, Muhammad M Khellah Intel, Hillsboro, OR 8T SRAM cell (Fig