10Gb/s 15mW Optical Receiver with Integrated Germanium Photodetector and Hybrid Inductor Peaking in 0.13µm SOI CMOS Technology

📋 论文概要

本文提出了一种在0.13µm SOI CMOS工艺中集成了锗光电探测器的10Gb/s光接收机，功耗仅15mW。通过采用混合电感峰化技术，有效提升了带宽，解决了铜互连在高速数据通信中的衰减、色散和串扰问题，为低成本光学互连提供了可行方案。

💡 主要创新点

• 在SOI CMOS工艺中单片集成锗光电探测器，省去了外部光电二极管，降低了封装成本。
• 提出混合电感峰化技术，在低功耗下实现10Gb/s的高速接收，改善了带宽限制。

🏷 关键词

📄 原文摘要

Sherif Abdalla, Jeremy Witzens, Subal Sahni Luxtera, Carlsbad, CA As data networks scale to meet increasing bandwidth requirements, the shortcomings of copper channels are becoming more apparent. Dispersion, attenuation, and crosstalk are the main impediments. They can be mitigated with equalization, coding, and shielding, but these techniques carry considerable power, complexity, and cable bulk penalties while offering only modest improvements in reach and limited scalability. Optical communication has been recognized as the successor to copper links; however, high cost of optical transceivers—a result of low degree of integration and reliance on exotic materials and technologies— has limited their proliferation outside of the long-haul systems. This paper presents a receiver developed using a silicon photonics technology platform that enables monolithic optoelectronic device integration in a low-cost CMOS

👥 作者与机构

Daniel Kucharski, Drew Guckenberger, Gianlorenzo Masini,