← 返回论文列表 📄 下载原文 PDF  ISSCC 2010 · 20.5
ISSCC 2010Session 20 · NEXT-GENERATION OPTICAL & ELECTRICAL INTERFACESRF & Wireless65nm CMOS

A 12.3mW 12.5Gb/s Complete Transceiver in 65nm CMOS

⚡ 本页包含 AI 生成的分析内容,仅供参考

📋 论文概要

该论文提出了一款在65nm CMOS工艺下实现的12.5Gb/s完整收发器,包括CDR、MUX/DEMUX和全局时钟分配,总功耗仅12.3mW,能效达到0.98mW/(Gb/s)(低于1pJ/b),解决了高速接口中功耗效率的长期挑战。

💡 主要创新点

核心指标
12.5Gb/s数据率, 12.3mW总功耗, 0.98mW/(Gb/s)能效
工艺节点
65nm CMOS
重要性
发表年份
ISSCC 2010

🏷 关键词

低功耗收发器65nm CMOS时钟数据恢复亚1pJ/b能效高速接口

📄 原文摘要

power dissipation per Gb/s to less than 1mW/(Gb/s) (i.e., 1pJ/b) has been a long-held goal. Several years ago, the power dissipation of these links was in the range of about 10 to 20mW/(Gb/s). In 2007, Poulton et al. developed a 14mW 6.25Gb/s transceiver with power efficiency of 2.2mW/(Gb/s) [1]. Thereafter, there were some efforts aiming to reduce power of each building block in a transceiver [2, 3]. This paper presents a 12.3mW 12.5Gb/s complete transceiver (including CDR, MUX/DEMUX, and global clock distribution)in 65nm CMOS with power efficiency of 0.98mW/(Gb/s). To achieve low power, a resonant-clock distribution with distributed on-chip inductors and a low-swing voltage-mode driver with pulse-current boosting are used in the transmitter, while a symbol-rate

👥 作者与机构

Koji Fukuda, Hiroki Yamashita, Goichi Ono, Ryo Nemoto, Eiichi Suzuki,

Takashi Takemoto, Fumio Yuki, Tatsuya Saito Hitachi, Tokyo, Japan For the people involved with multi-Gb/s chip-to-chip serial links, reducing

分类:RF & Wireless · 年份:ISSCC 2010