⚡ 本页包含 AI 生成的分析内容,仅供参考
该论文提出了一种采用双全局快门像素结构的低噪声CMOS图像传感器,解决了传统5T全局快门像素中kTC噪声和暗电流大的问题,实现了2.7e-的时间噪声、99.7%的快门效率和92dB的动态范围。
A low-noise global shutter CMOS image sensor is a next challenge to expand the market for CMOS image sensors. A low-noise global electronic shutter can be used for various applications such as high-speed imaging, machine vision and mechanical shutterless digital still cameras. A commonly used five transistor (5T) global shutter pixel using a floating diffusion memory suffers from large temporal noise due to kTC noise (reset noise) and large dark current [1]. Twostage charge transfer pixels such as a seven transistor (7T) active pixel [2] and a dual pinned-diode active pixel presented by the authors [3] cancel the kTC noise. However, such structures have an issue of low shutter efficiency due to leakage from a photodiode to storage gate or diode. Furthermore, the 7T pixel suffers from dark current and transfer noise because of the use of surface-channel storage gates. The dual pinned-diode pixel of the previous design has problem of non-linearity due to poor charge transfer efficiency f
Keita Yasutomi, Shinya Itoh, Shoji Kawahito
Shizuoka University, Hamamatsu, Japan