A W-Band 65nm CMOS Transmitter Front-End with 8GHz IF Bandwidth and 20dB IR-Ratio

📋 论文概要

该论文在65nm CMOS工艺中实现了一个W波段发射机前端芯片，支持8GHz中频带宽和20dB镜像抑制比，适用于通信、雷达和成像等应用。

💡 主要创新点

• 在65nm基线CMOS工艺中集成了W波段发射机前端，实现了较高的工作频率和带宽。
• 通过电路设计获得了8GHz的中频带宽和20dB的镜像抑制比，满足了多频段应用需求。

🏷 关键词

📄 原文摘要

The nanoscale era of CMOS technology has enabled the integration of mm-Wave circuits and front-ends at W-band [1,2]. The possible applications range from telecommunications (71 to 76 & 81 to 86GHz) and collision avoidance radar for cars at 77GHz to imaging and sensing at 94GHz. Some of the benefits of using CMOS technology are low costs per unit in mass production and the possibility to integrate more functions on the same chip. This paper demonstrate a W-band transmitter front-end chip in 65nm baseline CMOS. The topology of the integrated W-band transmitter front-end is presented in Fig. 23.3.1. It is suitable for both image-rejecting superheterodyne and direct-conversion transmission. The front-end uses two balanced mixers and quadrature IF signals, or baseband in-phase and quadrature signals, and in-phased balanced LO-drive signals. The image rejection or direct conversion is achieved when the RF signals are summed 90 degrees out of phase. Since the broadband

👥 作者与机构

Dan Sandström, Mikko Varonen, Mikko Kärkkäinen, Kari A. I. Halonen

Helsinki University of Technology, Espoo, Finland