A 13.1% Tuning Range 115GHz Frequency Generator Based on an Injection-Locked Frequency Doubler in 65nm CMOS

📋 论文概要

该论文提出了一种基于注入锁定倍频器的115GHz频率发生器，采用65nm CMOS工艺实现，可覆盖13.1%的调谐范围。针对毫米波成像和光谱学等应用，解决了高频频率源在CMOS工艺中调谐范围窄的问题。

💡 主要创新点

• 采用注入锁定倍频器结构，在65nm CMOS工艺下实现115GHz工作频率和13.1%的宽调谐范围。
• 通过优化注入锁定机制，在毫米波频段实现了低相位噪声和高输出功率。

🏷 关键词

📄 原文摘要

University of Modena and Reggio Emilia, Modena, Italy Istituto Universitario di Studi Superiori, Pavia, Italy 3 STMicroelectronics, Pavia, Italy 4 University of Pavia, Pavia, Italy 2 Ultra-scaled CMOS devices offer the possibility of operation beyond 100GHz where new applications are envisioned in the near future, including imaging and spectroscopy systems for scientific, medical, space, and industrial applications at low cost, light weight and easy assembly [1]. However, a long path toward complete systems of any commercial interest is required, even though simple building blocks have already been presented [2-6]. One of the challenges of such high-frequency transceivers is the on-chip reference generation. Adoption of a voltage-controlled oscillator (VCO) at fundamental frequency sets an increasingly severe trade-off between high spectral purity and frequency tuning due to a dramatic reduction of resonator quality factor and large parasitics introduced by

👥 作者与机构

Andrea Mazzanti1, Enrico Monaco1,2, Massimo Pozzoni3,

Francesco Svelto4