A 1V 17.9dBm 60GHz Power Amplifier in Standard 65nm CMOS

📋 论文概要

本文提出了一种基于标准65nm CMOS工艺的60GHz功率放大器，工作在1V电源电压下，实现了17.9dBm的输出功率。该设计解决了低电压下毫米波功率放大器输出功率不足的问题，适用于低功耗、高集成度的点对点多Gb/s无线通信应用。

💡 主要创新点

• 采用标准65nm CMOS工艺设计60GHz功率放大器，实现了1V低电压下的高输出功率（17.9dBm）
• 优化了电路拓扑和器件尺寸，在毫米波频段同时兼顾了增益、效率和线性度

🏷 关键词

📄 原文摘要

J. Watson, Yorktown Heights, NY 2 For point-to-point multi-Gb/s applications in mobile devices with single antennas, low-cost, highly integrated solutions are preferred, and CMOS technology is a candidate for mm-Wave SoC products. To provide users with nearly omnidirectional links, the TX power requirement could be considerably high. Assuming a receiver with 7dB NF, and 1dBi antennas at both ends of the link, the required power to transmit a 60GHz signal over 1m distance is 10dBm. A power amplifier (PA) that is capable of delivering 13dBm OP1dB for a 3Gb/s QPSK signal is thus needed if 3dB power back-off is added. This paper presents a CMOS PA meeting these requirements. To deliver such a power level at 60GHz using CMOS is challenging [1-4]. To attain fT/fMAX for providing sufficient gain at 60GHz, deeply-scaled CMOS technology should be used, which comes with low drain-source voltage for reliable

👥 作者与机构

Jie-Wei Lai1, Alberto Valdes-Garcia2, 1

MediaTek, Hsinchu, Taiwan IBM T