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本文提出了一种采用8路合成器的53-68GHz功率放大器，在标准65nm CMOS工艺中实现了18dBm输出功率，解决了60GHz频段功率放大器的功率性能和晶体管可靠性问题。
been demonstrated to satisfy the market demand for high data rates and frequency bandwidths [1-6]. However, 60GHz products need an improvement in power performance as well as transistor reliability for large signal operation. Moreover, Class-A or Class-AB power amplifiers (PA) are mandatory to overcome the difficulty of the limited maximum available gain (MAG) at mm-Wave frequencies [1-6] and the high linearity required by the OFDM modulation used in the IEEE 802.15.3c wireless HD standard. That means a maximum drain-source voltage swing of twice the DC voltage, which introduces specific design or supply voltage in order to respect reliability constraints [1,7]. This paper describes a PA with 8 power-combined ways
Baudouin Martineau1, Vincent Knopik2, Alexandre Siligaris3,
Frederic Gianesello1, Didier Belot1 1 STMicroelectronics, Crolles, France ST-Ericsson, Crolles, France 3 CEA-LETI-Minatec, Grenoble, France 2 CMOS circuits operating up to 60GHz have