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该论文提出了一种基于SiGe BiCMOS工艺的650GHz接收机前端，用于太赫兹成像阵列。通过集成天线和低噪声检测器，解决了低成本、大规模太赫兹成像阵列的集成难题。
Terahertz (300GHz-to-3THz) imaging systems and radars are capable of providing high resolution images while still penetrating many materials [1]. Imaging receivers based on III-V Schottky diodes and waveguide technology provide noise figures of less than 11dB at 590GHz [2] but cannot be easily integrated into low-cost large-scale imaging arrays. Silicon technologies, such as CMOS and SiGe BiCMOS, excel at large-scale integration and have recently shown capability of terahertz frequency generation [3], as well as low-noise mm-Wave detection [4]. However, due to the low power levels achievable on-chip, present silicon implementations of terahertz heterodyne receivers still require an externally generated local oscillator (LO) while suffering from noise figures (NF) in excess of 68dB due to insufficient pumping [5]. This paper presents an antenna-integrated, subharmonically pumped 650GHz receiver in silicon technology
Erik Öjefors, Ullrich R Pfeiffer
University of Wuppertal, Wuppertal, Germany