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ISSCC 2010Session 3 · CELLULAR TECHNIQUESRF & Wireless45nm CMOS

A 45nm WCDMA Transmitter Using Direct Quadrature Voltage Modulator with High Oversampling Digital Front-End

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📋 论文概要

本文提出一种采用直接正交电压调制器和高过采样数字前端的45nm WCDMA发射机,旨在消除FDD系统中TX与PA之间的SAW滤波器,同时满足严格的TX噪声地板要求(低于-156dBc/Hz),以支持WCDMA和LTE等应用。

💡 主要创新点

核心指标
-156dBc/Hz TX噪声地板
工艺节点
45nm CMOS
重要性
发表年份
ISSCC 2010

🏷 关键词

WCDMA直接正交电压调制高过采样数字前端SAW滤波器消除TX噪声

📄 原文摘要

In FDD systems such as WCDMA and LTE, simultaneous TX and RX operation poses a stringent TX noise floor requirement at the RX band. To eliminate the SAW filter between the TX and the PA without desensitizing the RX in WCDMA applications, the TX noise has to be lower than -156dBc/Hz [1-3]. In addition, the co-existence of cellular applications with other connectivity, navigation, and broadcast applications, also results in a stringent far-out noise floor requirement for all the TX including TDD systems such as TD-SCDMA and WiMax. Furthermore, the current trend of mobile platform implementation is moving toward SoC, aiming to integrate multistandard RF transceivers and digital baseband modems into a single chip in advanced CMOS processes. To benefit from the CMOS scaling-down in terms of power consumption and silicon area, a highly digitized multimode transmitter architecture is desired. For higher digitization

👥 作者与机构

Xin He, Jan van Sinderen, Robert Rutten

NXP Semiconductors, Eindhoven, Netherlands

分类:RF & Wireless · 年份:ISSCC 2010