Fully Depleted Extremely Thin SOI for Mainstream 20nm Low-Power Technology and Beyond

📋 论文概要

提出一种全耗尽极薄SOI (ETSOI) MOSFET技术，用于20nm及以下低功耗工艺。通过控制沟道厚度来抑制短沟道效应，无需传统缩放方法，同时降低泄漏电流并提高抗随机掺杂波动能力。

💡 主要创新点

• 采用极薄SOI沟道实现全耗尽，有效控制短沟道效应，无需激进缩放。
• 显著降低泄漏电流并提高抗随机掺杂波动能力，适用于低功耗应用。
• 为20nm及以下节点提供一种简化的工艺方案，无需复杂掺杂工程。

🏷 关键词

📄 原文摘要

Pranita Kulkarni1, Jeffrey W. Sleight3, Davood Shahrjerdi3, Josephine B. Chang3, Sungjae Lee4, Junjun Li4, Huiming Bu1, Robert Gauthier4, Bruce Doris1, Ghavam Shahidi3 1 IBM, Albany, NY, IBM, Hopewell Junction, NY, IBM T. J. Watson, Yorktown Heights, NY, 4 IBM, Essex Junction, VT 2 3 Extremely thin SOI (ETSOI) MOSFET is an attractive candidate for 22nm technology and beyond due to its excellent short channel control, low leakage current, and immunity to random dopant fluctuation [1-5]. Short channel effects are mainly controlled by channel thickness, so there is no need for aggressive scaling of the gate dielectric. Thus the gate leakage is reduced beyond what is achievable in high-k bulk technologies. Low-power operation is further enhanced by negligible GIDL current due to the undoped channel. In addition, ETSOI devices have inherently no junction leakage by the virtue of thin silicon channel. Higher gate voltage overdrive is achieved for a given supply voltage

👥 作者与机构

Ali Khakifirooz1, Kangguo Cheng1, Basanth Jagannathan2,