Design Issues and Considerations for Low-Cost 3D TSV IC Technology

📋 论文概要

本文分析了低成本3D TSV（硅通孔）集成电路的设计问题和考虑因素，探讨了TSV技术中的热管理、机械应力、电性能等关键挑战，并提出了相应的解决方案。

💡 主要创新点

• 系统性地总结了低成本3D TSV IC设计中的主要问题，如热效应、应力与可靠性
• 提出了针对TSV集成工艺优化的设计考虑，包括信号完整性、功耗和成本权衡

🏷 关键词

📄 原文摘要

Herman Oprins1, Cristina Torregiani1, Steven Thijs1, Dimitri Linten1, Michele Stucchi1, Katti Guruprasad1, Dimitrios Velenis1, Domae Shinichi2, Vladimir Cherman1, Bart Vandevelde1, Veerle Simons1, Ingrid De Wolf1, Riet Labie1, Dan Perry3, Stephane Bronckers1, Nikolas Minas1, Miro Cupac1, Wouter Ruythooren1, Jan Van Olmen1, Alain Phommahaxay1, Muriel de Potter de ten Broeck1, Ann Opdebeeck1, Michal Rakowski1, Bart De Wachter1, Morin Dehan1, Marc Nelis1, Rahul Agarwal1, Wim Dehaene4, Youssef Travaly1, Pol Marchal1, Eric Beyne1 1 IMEC, Leuven, Belgium, Panasonic, Leuven, Belgium, 3 Qualcomm, Leuven, Belgium, 4 K.U. Leuven, Leuven, Belgium 2 3D TSV (through silicon via) technologies promise increased system integration at lower cost and reduced footprint [1]. Different variants of 3D technologies have recently been introduced in application areas such as DRAM stacking [2], imagers [3][4], SSDs (Solid-StateDrives) [5]. In this paper we investigate the

👥 作者与机构

Geert Van der Plas1, Paresh Limaye1, Abdelkarim Mercha1,