Demonstration of Integrated Micro-ElectroMechanical Switch Circuits for VLSI Applications

📋 论文概要

该论文展示了集成微机电开关电路在VLSI应用中的可行性，通过构建环形振荡器验证了机械开关的延迟特性，解决了传统CMOS在极端环境下功耗和可靠性的问题。

💡 主要创新点

• 首次在VLSI中集成微机电开关并实现功能电路
• 通过测量机械延迟和开关电阻，验证了MEMS开关在亚100ns边缘速度下的性能

🏷 关键词

📄 原文摘要

Hossein Fariborzi1, Abhinav Gupta2, Hei Kam2, Vincent Pott2, Jaeseok Jeon2, Tsu-Jae King Liu2, Dejan Markovic3, Vladimir Stojanovic1, Elad Alon2 Massachusetts Institute of Technology, Cambridge, MA, University of California, Berkeley, CA, 3 University of California, Los Angeles, CA infrastructure (probecard and oscilloscope), which is estimated to be 150pF. The oscillator’s falling edge sees the same load capacitance, but its delay is set by the on-resistance of the switch, which is estimated as 6kΩ for the sub-100ns falling edge. The mechanical delay of the device can be measured from the time the rising edge reaches Vpi to when the switch actuates; due to the low gate overdrive, the mechanical delay is measured at ~20-30µs. The estimated capacitance of the switch-gate is ~375fF, resulting in an intrinsic electrical time constant of ~2ns. 1 2 Due to transistor leakage, CMOS circuits have a well-defined lower limit on their

👥 作者与机构

Fred Chen1, Matthew Spencer2, Rhesa Nathanael2, Chengcheng Wang3,