A Precise-Tracking NBTI-Degradation Monitor Independent of NBTI Recovery Effect

📋 论文概要

本文提出一种精确跟踪的NBTI退化监测器，能够独立于NBTI恢复效应对延迟退化进行快速测量，解决了传统监测器因恢复效应导致测量不准的问题。

💡 主要创新点

• 提出一种不受NBTI恢复效应影响的监测方法，通过在1µs内完成测量避免退化恢复。
• 采用精确跟踪机制，实现高精度实时监测NBTI导致的延迟退化。

🏷 关键词

📄 原文摘要

Scaling has accelerated transistor degradation with respect to aging, especially for Negative Bias Temperature Instability (NBTI), which can cause more than a 10% degradation in delay [1]. It is known that in NBTI conditions, delay degradation decreases quickly after the DC-stress has been removed. Conventional aging monitors [3][4] have difficulty in characterizing NBTI accurately because they require long-term observations (more than 1µs) of delay degradation, whilst recovery from delay degradation will be accomplished in less than 1µs

👥 作者与机构

Eisuke Saneyoshi, Koichi Nose, Masayuki Mizuno

NEC, Kanagawa, Japan