⚡ 本页包含 AI 生成的分析内容，仅供参考
本文提出一种通过原位退化感知实现早期检测氧化物击穿的方法，用于动态监控芯片的可靠性。该方法允许减少不必要的保守电压裕度，从而提升性能，并针对缺陷芯片通过降低供电电压和限制峰值温度延长其寿命。
high-performance design as it determines the maximum supply voltage, degrading maximum performance and SRAM stability [1]. OBD is an inherently statistical process where some devices fail long before others. Hence, a priori lifetime prediction requires statistical estimation that leads to conservative margins in supply voltage that are unnecessary for most parts and for most operating conditions. Dynamic (runtime) OBD monitoring [2], allows voltage margins to be reduced while the lifetime of infrequent defect-prone chips can be extended through supply-voltage reduction and limits on peak temperature. To ensure that corrective measures are taken well before a device fails completely it is critical that OBD monitoring detects the onset of breakdown (soft breakdown), when the oxide becomes leaky yet the device continues to function correctly.
Prashant Singh, Zhiyoong Foo, Michael Wieckowski, Scott Hanson,
Matt Fojtik, David Blaauw, Dennis Sylvester University of Michigan, Ann Arbor, MI Oxide breakdown (OBD) is a major concern in