⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文介绍了一款采用24nm CMOS工艺制造的64Gb MLC NAND闪存芯片，面积为151mm²。通过工艺微缩和电路优化，解决了高密度存储下的可靠性和性能问题。
Junpei Sato1, Teruo Takagiwa1, Naoaki Kanagawa1, Hitoshi Shiga1, Naoya Tokiwa1, Yoshihiko Shindo1, Toshiaki Edahiro1, Takeshi Ogawa1, Makoto Iwai1, Osamu Nagao1, Junji Musha1, Takatoshi Minamoto1, Kosuke Yanagidaira1, Yuya Suzuki1, Dai Nakamura1, Yoshikazu Hosomura1, Hiromitsu Komai1, Yuka Furuta1, Mai Muramoto1, Rieko Tanaka1, Go Shikata1, Ayako Yuminaka1, Kiyofumi Sakurai2, Manabu Sakai3, Hong Ding3, Mitsuyuki Watanabe3, Yosuke Kato3, Toru Miwa3, Alex Mak4, Masaru Nakamichi3, Gertjan Hemink3, Dana Lee4, Masaaki Higashitani4, Brian Murphy4, Bo Lei4, Yasuhiko Matsunaga1, Kiyomi Naruke1, Takahiko Hara1 1 Toshiba Semiconductor, Yokohama, Japan, Toshiba Memory Systems, Yokohama, Japan, Sandisk, Yokohama, Japan, 4 Sandisk, Milpitas, CA 2 3 NAND flash memories are now indispensable for our modern lives. The application range of the storage memory devices began with digital still cameras and has been extended to USB memories, memory cards, MP3 players, cell phones
Koichi Fukuda1, Yoshihisa Watanabe1, Eiichi Makino1, Koichi Kawakami1,