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本文提出了一款4Mb嵌入式SLC电阻式RAM（RRAM）宏，实现了7.2ns的读写随机访问时间，并具备160ns的MLC访问能力。该设计解决了传统嵌入式闪存速度慢的问题，为高速非易失性存储提供了新方案。
Yu-Sheng Chen1,2, Pi-Feng Chiu1,2, Chia-Chen Kuo2, Yih-Shan Yang2, Pei-Chia Chiang1, Wen-Pin Lin1, Che-He Lin1, Heng-Yuan Lee1, Pei-Yi Gu1, Sum-Min Wang1, Frederick T. Chen1, Keng-Li Su1, Chen-Hsin Lien2, Kuo-Hsing Cheng3, Hsin-Tun Wu1, Tzu-Kun Ku1, Ming-Jer Kao1, Ming-Jinn Tsai1 1 ITRI, Hsinchu, Taiwan, National Tsing Hua University, Hsinchu, Taiwan, 3 National Central University, Jhongli, Taiwan 2 Several emerging nonvolatile memories (NVMs) including phase-change RAM (PCRAM) [1-3], MRAM [4-5], and resistive RAM (RRAM) [6-8] have achieved faster operating speeds than embedded Flash. Among those emerging NVMs, RRAM has advantages in faster write time, a larger resistance-ratio (R-ratio), and smaller write power consumption. However, RRAM cells have large crossdie and within-die resistance variations (R-variations) and require low readmode bitline (BL) bias voltage (VBL-R) to prevent read disturbance. This work
Shyh-Shyuan Sheu1, Meng-Fan Chang2, Ku-Feng Lin2, Che-Wei Wu2,