⚡ 本页包含 AI 生成的分析内容，仅供参考
论文提出了一种采用Vth裕度扩展方案的32Gb MLC NAND闪存，在26nm CMOS工艺上实现，解决了高密度NAND闪存中阈值电压分布裕度不足的问题，提高了数据可靠性。
Byoung-sung You, kwang-ho Baek, Jae-ho Lee, Chang-won Yang, Misun Yun, Min-su Kim, Jong-woo Kim, Eun-seong Jang, Hyun Chung, Sang-o Lim, Bong-Seok Han, Yo-Hwan Koh Hynix Semiconductor, Icheon, Korea As the NAND flash memory market grows rapidly due to various applications, such as USB devices, MP3 players, SSDs, cellular phones, and cameras, there is a requirement for high-density and low-cost devices. Two different approaches to meet these requirements are increasing data per cell and area scaling. 3b/cell or 4b/cell NAND flash memories were introduced as an effective way to lower cost [1,2]. However, these devices suffer from program performance degradation since tighter Vth distribution is required. On the other hand, area scaling is a candidate to achieve low cost while maintaining high program performance even though there are several hurdles to overcome, such as FG coupling and charge retention [3]. As the cell size gets smaller, the Vth distribution
Tae-yun Kim, Sang-Don Lee, Jin-su Park, Ho-youb Cho,