A 4Mb Conductive-Bridge Resistive Memory with 2.3GB/s Read-Throughput and 216MB/s Program-Throughput

📋 论文概要

该论文提出了一款4Mb导电桥电阻存储器（CBRAM），通过创新的电路和架构设计实现了2.3GB/s的读吞吐量和216MB/s的写吞吐量，解决了非易失性存储器在高性能存储和访问中的数据速率瓶颈问题。

💡 主要创新点

• 采用导电桥存储单元技术实现低电压、高速和良好的可扩展性。
• 通过优化的存储阵列和读写路径设计，实现了超过2GB/s的读吞吐量。
• 开发了高效的编程电路，使写吞吐量达到216MB/s，显著优于传统非易失性存储器。

🏷 关键词

📄 原文摘要

higher performance in the storage and access of data in various consumer electronic and computing devices has driven the development of nonvolatile memory (NVM) technologies. The promising candidates for future NVM such as FeRAM and PCM have demonstrated shorter access time, faster programming and wide read/write bandwidth in the chip and the memory macro [1-2]. Resistive memory (ReRAM) is also one of alternative NVMs, because of its low operating voltage, high speed and good scalability. Several types of ReRAM characteristics have been investigated on memory array [3-6]. However, most are limited in terms of memory array performance because of not having suitable read/write circuit for ReRAM. In this work, we present a 4Mb

👥 作者与机构

Wataru Otsuka1, Koji Miyata1, Makoto Kitagawa1, Keiichi Tsutsui1,

Tomohito Tsushima1, Hiroshi Yoshihara2, Tomohiro Namise2, Yasuhiro Terao2, Kentaro Ogata2 1 Sony, Kanagawa, Japan, 2Sony LSI Design, Nagasaki, Japan The growing demand for