⚡ 本页包含 AI 生成的分析内容，仅供参考
本文介绍了一款采用20nm工艺的64Gb 3位/单元DDR NAND闪存芯片，实现了7MB/s的写入速度。该芯片满足了市场从2位/单元向3位/单元过渡的需求，解决了高密度存储下的可靠性和性能挑战。
In-Mo Kim, Bo-Geun Kim, Min-Seok Kim, Yoon-Hee Choi, Seung-Hwan Shin, Youngson Song, Joo-Yong Park, Jae-Eun Lee, Chang-Gyu Eun, Ho-Chul Lee, Hyeong-Jun Kim, Jun-Hee Lee, Jong-Young Kim, Tae-Min Kweon, Hyun-Jun Yoon, Taehyun Kim, Dong-Kyo Shim, Jongsun Sel, Ji-Yeon Shin, Pansuk Kwak, Jin-Man Han, Keon-Soo Kim, Sungsoo Lee, Young-Ho Lim, Tae-Sung Jung Samsung Electronics, Hwasung, Korea Recently, the demand for 3b/cell NAND flash has been increasing due to a strong market shift from 2b/cell to 3b/cell in NAND flash applications, such as USB disk drives, memory cards, MP3 players and digital still cameras that require costeffective flash memory. To further expand the 3b/cell market, high write and read performances are essential [1]. Moreover, the device reliability requirements for these applications is a challenge due to continuing NAND scaling to sub-30nm pitches that increases cell-to-cell interference and disturbance. We present a
Ki-Tae Park, Ohsuk Kwon, Sangyong Yoon, Myung-Hoon Choi,