⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文提出了一款工作在820GHz的SiGe芯片组，用于太赫兹主动成像系统。通过采用SiGe BiCMOS工艺，实现了太赫兹频段的信号源和接收器，替代了传统的III-V族半导体和波导封装技术，提升了成像系统的集成度和性能。
mmWave imaging systems can be improved by an increase of their operating frequencies into the submillimeterwave range (300GHz to 3THz). Electronic terahertz sources and receivers are presently dominated by III/V semiconductor and waveguide packaging technologies. Multipliers and mixers capable of an output power of 1.4mW at 875GHz
Erik Öjefors1, Janus Grzyb1, Yan Zhao1, Bernd Heinemann2,
Bernd Tillack2, Ullrich R Pfeiffer1 1 University of Wuppertal, Wuppertal, Germany, 2 IHP, Frankfurt (Oder), Germany The spatial resolution of microwave and