6W/25mm2 Inductive Power Transfer for Non-Contact Wafer-Level Testing

📋 论文概要

该论文提出了一种用于非接触式晶圆级测试的感应功率传输方案，实现了6W功率传输和25mm2的面积。解决了传统探针卡接触测试中损坏低k介质层、变形焊盘/凸点以及薄晶圆处理困难等问题。

💡 主要创新点

• 首次将感应功率传输技术应用于晶圆级非接触测试，避免了机械接触带来的损伤。
• 在25mm2的小面积内实现了6W的功率传输，适用于高密度晶圆测试。

🏷 关键词

📄 原文摘要

nonfunctional devices early in the fabrication process. It is commonly performed by placing a probe card directly above a device under test (DUT) and establishing a mechanical contact between them by means of an array of probes. This is an invasive technique that may damage fragile low-k dielectric layers and deform pads or bumps. More importantly, it is very difficult to flip thinned wafers face up for probing if they were earlier positioned face down for back grinding. Additional difficulty in handling of thinned wafers arises if dies have to be flipped again for bumping. One solution to above problems is wireless probing. With a number of proposed techniques for establishing high-speed inductive-coupling data links [3] and measuring DC analog signal wirelessly [4], the largest remaining obstacle to non-contact wafer-level testing

👥 作者与机构

Andrzej Radecki, Hayun Chung, Yoichi Yoshida, Noriyuki Miura,

Tsunaaki Shidei, Hiroki Ishikuro, Tadahiro Kuroda Keio University, Yokohama, Japan Wafer-level testing allows detection of manufacturing errors and removes