⚡ 本页包含 AI 生成的分析内容,仅供参考
本文展望了未来十年实现10倍功耗降低的挑战与解决方案,强调系统级方法、位单元优化和低电压数字电路材料的重要性,并探讨了TSV、RF集成电感变压器以及协同设计CAD工具等关键方向。
materials for low-voltage digital circuits. TSVs will be important in reducing I/O power and the length of on-chip interconnects. For RF, integrated inductors and transformers with significantly lower resistance will be the challenge. Future CAD tools optimizing energy will focus on co-design of packaging, architecture, power sources, and antenna to provide the best system solution. Domain experts will challenge the distinguished panelists to suggest directions and help create a roadmap for next-generation energy-efficient electronics. Moderator: Jan Rabaey University of California, Berkeley, Berkeley, CA Domain Experts: Mark Horowitz Stanford University, Palo Alto, CA Takayasu Sakurai University of Tokyo, Tokyo, Japan Jack Sun TSMC, Hsin-Chu, Taiwan Dan Dobberpuhl Consultant, Monterey, CA Kiyoo Itoh Hitachi, Tokyo, Japan Philippe Magarshack STMicroelectronics, Crolles, France Asad Abidi University of California,
to use a system-level approach which requires bit-cell optimization, low-voltage operation with integrated regulators, 3D Through-Silicon Vias (TSV), and process optimization. RF transceivers will continue to trend toward highly-digital architectures., The role of process-technology innovation and CAD tools will also be discussed. Future process technology will deliver new transistor structures and higher-mobility channel