A 220-to-275GHz Traveling-Wave Frequency Doubler with -6.6dBm Power at 244GHz in 65nm CMOS

📋 论文概要

该论文提出了一种工作在220-275GHz的行波倍频器，采用65nm CMOS工艺实现，在244GHz处输出功率为-6.6dBm。它通过分布式结构克服了传统CMOS倍频器在高频段输出功率低和调谐范围窄的问题，为太赫兹信号源提供了新的解决方案。

💡 主要创新点

• 提出行波倍频器结构，利用分布式设计实现宽频带和高输出功率。
• 在65nm CMOS工艺中实现了220-275GHz的工作频率，突破了传统CMOS倍频器的高频限制。

🏷 关键词

📄 原文摘要

There is a growing interest in using CMOS technology in the mm-Wave and terahertz frequency ranges for applications such as spectroscopy, imaging, compact range radars, and remote sensing [1]. Tunable signal sources are one of the main blocks in any such systems. Fundamental frequency voltage-controlled oscillators (VCOs) are widely employed for signal generation. However, CMOS VCOs suffer from low tuning range and low output power due to poor quality factor of varactors at high mm-Wave frequencies [2]. To alleviate these drawbacks CMOS frequency multipliers have been proposed for frequencies below 150GHz [2,3]. At higher frequencies, multipliers are implemented using compound semiconductors [4,5]. In this paper we propose a traveling-wave frequency doubler that operates from 220 to 275GHz in a 65nm CMOS process. Output power of 6.6dBm and conversion loss of 11.4dB are achieved at 244GHz.

👥 作者与机构

Omeed Momeni, Ehsan Afshari

Cornell University, Ithaca, NY