A 120GHz 10Gb/s Phase-Modulating Transmitter in 65nm LP CMOS

📋 论文概要

该论文提出了一款基于65nm LP CMOS工艺的120GHz全集成相位调制发射机，实现了超过10Gb/s的数据速率。通过采用高速相位调制架构，解决了在120GHz毫米波频段进行宽带调制的挑战，满足了无线通信对更高数据速率的迫切需求。

💡 主要创新点

• 采用一种简洁且高速的相位调制架构，实现了120GHz频段的高数据速率通信。
• 在65nm低功耗CMOS工艺上实现了全集成120GHz发射机，达到10Gb/s以上的传输速率。

🏷 关键词

📄 原文摘要

This paper presents a 120GHz fully integrated 65nm low power (LP) CMOS transmitter that achieves data rates above 10Gb/s. At these high frequencies an extremely high bandwidth is available. This allows multi-gigabit-per-second communication which provides an answer to the ever-increasing demand for higher data rates in wireless systems. However, wideband modulation of a 120GHz signal in 65nm LP CMOS is a challenge. To achieve a high data rate at these high frequencies, a straightforward and highspeed phase modulator architecture is implemented. Figure 16.7.1 shows the complete schematic of the transmitter. The LO input signal is first buffered by a 2-stage buffer amplifier. The phase generation is done by a novel differential branchline coupler that generates two differential quadrature signals. These 2 signals are fed into two 6-stage driver amplifiers. By means of differential splitters, each signal is split in an in-phase and an inverted signal. This results in 4

👥 作者与机构

Noël Deferm, Patrick Reynaert

KU Leuven, Leuven, Belgium