A 1V Printed Organic DRAM Cell Based on Ion-Gel Gated Transistors with a Sub-10nW-per-Cell Refresh Power

📋 论文概要

本文提出了一种基于离子凝胶门控晶体管的印刷有机DRAM单元，实现了1V低电压工作，刷新功耗低于10nW每单元，解决了有机晶体管在存储应用中功耗高的问题。

💡 主要创新点

• 首次采用离子凝胶作为栅介质，实现了低电压（1V）工作的印刷有机DRAM单元。
• 通过优化器件结构和材料，将每单元刷新功耗降低至10nW以下，显著优于传统有机存储方案。
• 展示了全印刷工艺制备的有机DRAM，为柔性、大面积、低成本电子系统提供了可行的存储方案。

📄 原文摘要

C. Daniel Frisbie1, Chris H. Kim1 1 2 University of Minnesota, Minneapolis, MN, Optomec, St. Paul, MN Organic thin-film-transistors (OTFTs) are drawing much attention as they have attributes such as structural flexibility, low-temperature processing, large area coverage, and low cost, which make them attractive for large-area electronics. Various forms of OTFTs can enable applications that were not achievable using traditional inorganic transistors and/or surpass them in terms of performance and cost. OTFTs cannot match the performance of silicon-based transistors, but can complement them by enabling electronic flexible systems, which don’t have to operate at high-speed. Recently, inkjet printing has become a popular method for low-cost manufacturing of OTFTs making product level implementations feasible. Despite these encouraging developments, the relatively high voltage needed to power up traditional OTFT devices and the lack of a good n-type device

👥 作者与机构

Wei Zhang1, Mingjing Ha1, Daniele Braga1, Michael J. Renn2,