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ISSCC 2011Session 21 · CELLULARRF & Wireless40nm LP CMOS

A Multiband LTE SAW-less Modulator with -160dBc/Hz RX-Band Noise in 40nm LP CMOS

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📋 论文概要

该论文提出了一种多频段LTE无SAW调制器,解决了传统方案中因双工器隔离不足导致的RX频段噪声问题,从而省去了功率放大器前的SAW滤波器。该设计在40nm LP CMOS工艺中实现了-160dBc/Hz的RX频段噪声性能,满足了LTE标准对噪声的严苛要求。

💡 主要创新点

核心指标
-160dBc/Hz RX-band noise
工艺节点
40nm LP CMOS
重要性
发表年份
ISSCC 2011

🏷 关键词

多频段LTE无SAW调制器RX频段噪声

📄 原文摘要

receive band due to the finite duplexer TX to RX isolation. If this noise is not low enough, a SAW filter is needed before the Power Amplifier to preserve the RX sensitivity. Out-of-band noise is also an important concern for coexistence of cellular transmitters with standards like GPS, WLAN and/or WiMAX on the same smart phone, a very common scenario nowadays. The SAW-less RX-band noise challenge becomes even more acute in the Long-Term Evolution (LTE) standard

👥 作者与机构

Vito Giannini1, Mark Ingels1, Tomohiro Sano2, Bjorn Debaillie1,

Jonathan Borremans1, Jan Craninckx1 1 imec, Leuven, Belgium, 2Renesas Electronics, Itami, Japan In FDD cellular standards, the transmitter’s out of-band noise leaks into the

分类:RF & Wireless · 年份:ISSCC 2011