An APS-C Format 14b Digital CMOS Image Sensor with a Dynamic Response Pixel

📋 论文概要

该论文提出了一种APS-C格式的14位数字CMOS图像传感器，采用动态响应像素技术，通过消除像素阵列中的浅沟槽隔离（STI）来减少热像素和暗电流，并利用更大的栅极宽度降低源跟随器的1/f和RTS噪声。

💡 主要创新点

• 通过消除像素阵列中的STI，显著减少了热像素和暗电流的来源。
• 采用更大栅极宽度的源跟随器，降低了1/f噪声和随机电报信号（RTS）噪声。

🏷 关键词

📄 原文摘要

Toshiaki Sato2, Tim Bales3, Katsuyuki Kawamura2, Eduard Pages2, Shinichiro Matsuo2, Tetsuji Kawaguchi2, Tadashi Sugiki2, Norio Yoshimura2, Junichi Nakamura2, John Ladd1, Zhiping Yin1, Russell Iimura1, Xiaofeng Fan1, Scott Johnson1, Aditya Rayankula1, Rick Mauritzson1, Gennadiy Agranov1 1 Aptina, San Jose, CA, Aptina, Tokyo, Japan, 3 Aptina, Bracknell, United Kingdom within the pixel array, thus eliminating a major source of hot pixels and dark current. Also, 1/f and RTS noise of the source follower is reduced due to the larger gate width and fewer defect sites associated with the STI elimination. The TX gate also has a ring shape with the floating diffusion (FD) surrounded by this TX poly gate. MOS capacitor structure is used to electrically isolate PD and transistor regions. Figure 23.10.3 presents the quantum efficiency (QE) spectral characteristic. The pixel achieves high QE (62%) and low crosstalk. It also provides very good

👥 作者与机构

Dan Pates1, Jeong-Ho Lyu1, Shinji Osawa2, Isao Takayanagi2,