A 300mm Wafer-Size CMOS Image Sensor with In-Pixel Voltage-Gain Amplifier and Column-Level Differential Readout Circuitry

📋 论文概要

本文提出了一种基于300mm晶圆尺寸的CMOS图像传感器，采用像素内电压增益放大器和列级差分读出电路，解决了非晶硅大画幅传感器因载流子迁移率低导致的性能不足问题，实现了更快的读出速度。

💡 主要创新点

• 在像素内集成电压增益放大器，提高像素输出的信号幅度和信噪比。
• 采用列级差分读出电路架构，降低读出噪声并提升列级信号处理能力。

🏷 关键词

📄 原文摘要

Masato Fujita, Satoshi Hirayama, Taikan Kanou, Sakae Hashimoto, Genzo Momma, Shunsuke Inoue Canon, Kawasaki, Japan Large-format image sensors provide us with a new form of vision in several areas such as astronomy and industry. The sensors commonly comprise thinfilm transistors (TFTs) and photodiodes (PDs) on amorphous silicon. The capabilities of the amorphous silicon sensors, however, are insufficient due to the low carrier mobility of the TFTs. Recently several large-format CCDs [1] and CMOS image sensors [2,3] have been developed on crystal silicon wafers for faster readout speed, reduced image lag, high sensitivity and reduced noise. In this paper, we describe the architecture of a wafer-size CMOS image sensor enabling to enlarge the size of the large-format sensor while maintaining good signal quality. The good signal quality is the key for a low-noise and high-framerate image sensor. For this purpose, each pixel of our sensor has a programmable voltage amplifier. In addition, th

👥 作者与机构

Yuichiro Yamashita, Hidekazu Takahashi, Shin Kikuchi, Keisuke Ota,