A 1/2.33-inch 14.6M 1.4µm-Pixel BacksideIlluminated CMOS Image Sensor with Floating Diffusion Boosting

📋 论文概要

本文提出了一款1/2.33英寸、14.6M像素、1.4µm像素尺寸的背照式CMOS图像传感器，采用浮动扩散增强技术以提升像素信噪比，满足高分辨率和高速度成像需求。

💡 主要创新点

• 采用背照式(BSI)技术改善小像素尺寸下的SNR性能
• 引入浮动扩散增强(Floating Diffusion Boosting)技术以提升电荷转移效率
• 实现高分辨率(14.6M像素)与高速操作兼容的像素设计

🏷 关键词

📄 原文摘要

Younghwan Park1, Taesub Jung1, Youngheup Jang1, Bumsuk Kim1, Yitae Kim1, Shay Hamami2, Uzi Hizi2, Mickey Bahar2, Changrok Moon1, JungChak Ahn1, Duckhyung Lee1, Hiroshige Goto1, Yun-Tae Lee1 1 Samsung Electronics, Yong-In, Korea, Samsung Semiconductor, Ramat-Gan, Israel 2 As pixel sizes continue to scale down, backside-illuminated (BSI) technology has been recently adopted as a solution to improve pixel SNR performance [1,2]. In addition, as the application of image sensors widens from digital still cameras to digital camcorders, high-resolution and high-speed operation are required. This paper presents 1/2.33-inch 14.6Mpixel CMOS image sensor employing a 1.4µm BSI pixel architecture with a floating-diffusion (FD) boosting scheme that enables high SNR and high speed read-out. In a high-resolution and high-speed CMOS image sensor with small size pixel, one horizontal readout time period is too short to get enough margin for the

👥 作者与机构

Sangjoo Lee1, Kyungho Lee1, Jongeun Park1, Hyungjun Han1,