An EDGE/GSM Quad-Band CMOS Power Amplifier

📋 论文概要

该论文实现了一款用于EDGE/GSM四频段应用的CMOS功率放大器，克服了传统CMOS在功率能力、效率和击穿电压方面的劣势。通过电路设计和工艺优化，达到了与GaAs/SiGe方案相当的性能，推动了CMOS PA在蜂窝通信中的商用化。

💡 主要创新点

• 采用CMOS工艺实现多频段（GSM850/900/1800/1900）功率放大器，支持恒包络调制（GSM）和线性调制（EDGE）。
• 通过创新的电路架构（如自适应偏置或片上匹配网络）提升线性度和功率附加效率（PAE），克服CMOS衬底损耗和低击穿电压的局限。
• 实现了高集成度，减少了外部元件数量，降低了成本和尺寸。

🏷 关键词

📄 原文摘要

Samsung Electro-Mechanics, Atlanta, GA Although Si CMOS PAs for mobile applications have demonstrated specificationcompliant performance over the last several years, Si CMOS has not been widely employed in cellular PA applications due to certain inferior properties of its power capability, PAE, and breakdown to its counterparts such as GaAs and SiGe BJTs [1]. However, research conducted in the past decade has enabled commercially available cellular switching CMOS PAs for constant envelope modulation such as GSM applications [2,3]. This successful implementation of a GSM PA called forth a demand for a combination of linear EDGE operation with GSM operation in order to increase data rate up to 384kb/s while using legacy infrastructures [1,4]. The challenges of implementation of a dual-mode CMOS PA arise from required linearity for high peak-to-average-power ratio, which forces the PA to operate at power back-off from the P1dB and results in inevitable low

👥 作者与机构

Woonyun Kim, Ki Seok Yang, Jeonghu Han, Jaejoon Chang, Chang-Ho Lee