⚡ 本页包含 AI 生成的分析内容，仅供参考
本文提出了一种基于低成本CMOS工艺的宽带太赫兹成像器，解决了传统THz系统成本高昂的问题，实现了安全、非电离的成像能力，适用于薄材料成像和3D雷达探测。
Dominique Coquillat2, Maciej Sakowicz2, Jean-Pierre Rostaing1, Michaël Tchagaspanian1, Benoît Giffard1, Wojciech Knap2 1 2 CEA-LETI-MINATEC, Grenoble, France, Université Montpellier 2 -CNRS UMR, Montpellier, France Terahertz (THz) technology has become of large interest over the last 10 years. THz rays are an alternative to X-rays for imaging through thin materials and their non-ionizing character makes them inherently health-safe. The THz domain is also suitable for heterodyne detection and the use of radar techniques to perform 3D imaging. Commercial applications range from non-destructive testing, security screening of objects or persons, and medical imaging to secure communications. Among the multitude of existing THz detectors, silicon field-effect transistors have shown to be suitable for cost-effective video-rate imaging, offering the advantages of room temperature operation, integration of read-out electronics
Franz Schuster1,2, Hadley Videlier2, Antoine Dupret1,