A 2.5GHz 32nm 0.35mm2 3.5dB NF -5dBm P1dB Fully Differential CMOS Push-Pull LNA with Integrated 34dBm T/R Switch and ESD Protection

📋 论文概要

该论文提出了一款2.5GHz全差分CMOS推挽LNA，集成了34dBm的T/R开关和ESD保护，在32nm工艺下实现了0.35mm²的小面积、3.5dB的低噪声系数和-5dBm的P1dB线性度。解决了SoC集成中射频前端的高线性度、低噪声和低成本问题。

💡 主要创新点

• 采用全差分推挽结构实现高线性度和低噪声，同时集成T/R开关和ESD保护，无需额外电感。
• 利用先进CMOS工艺的过剩fT，实现电感器调谐LNA以改善带外抑制，并简化与T/R开关的集成。

🏷 关键词

📄 原文摘要

Intel, Hillsboro, OR Process scaling enables SoC integration of radio and large digital systems at reduced cost and area. Furthermore, the crowded spectrum requires high linearity receivers to enable co-existence in the 2.4GHz ISM band. Inductorless LNA designs have been studied to make use of the excess fT in advanced CMOS technologies to lower cost [1]. However, an inductively tuned LNA has the advantage of improved out-of-band rejection, and can be readily integrated with a transmit/receive (T/R) switch to provide isolation in the TX mode without the need for additional inductors [2]. In this paper, a 2.5GHz fully differential tuned LNA with integrated T/R switch is designed in a High-K metal gate 32nm digital CMOS process, and packaged in an SoC-compatible flip-chip package. Reliability constraints of the package severely limit the ability to depopulate soldering bumps, and RF components must be designed taking the bump location into

👥 作者与机构

Chang-Tsung Fu, Hasnain Lakdawala, Stewart S. Taylor, Krishnamurthy Soumyanath