A 65nm CMOS Pulse-Width-Controlled Driver with 8Vpp Output Voltage for Switch-Mode RF PAs up to 3.6GHz

📋 论文概要

该论文提出了一种采用65nm CMOS工艺的脉冲宽度控制驱动器，能够输出8Vpp电压并工作至3.6GHz，适用于开关模式射频功率放大器，解决了深亚微米CMOS中实现大功率射频PA的难题。

💡 主要创新点

• 创新点1：采用脉冲宽度控制技术实现驱动器的输出幅度和相位调节，适用于开关模式PA。
• 创新点2：在65nm CMOS工艺中实现8Vpp的高压输出，克服了常规CMOS击穿电压限制。
• 创新点3：支持高达3.6GHz的工作频率，满足宽带无线基础设施需求。

🏷 关键词

📄 原文摘要

Melina Apostolidou2, Leo C.N. de Vreede1, Domine Leenaerts2, Jan Sonsky3 1 Delft University of Technology, Delft, The Netherlands, NXP Semiconductors, Eindhoven, The Netherlands, 3 NXP-TSMC Research Center, Leuven, Belgium 2 State-of-the-art wireless communication radios are implemented in deep-submicron CMOS, including the RF power amplifiers (PAs). However, in wireless infrastructure systems, the RF PA is often realized in an LDMOS or a compound technology to obtain the required large output powers. For next-generation reconfigurable infrastructure systems, the switch-mode PAs (SMPA) seem to offer the required flexibility for multiband multimode transmitters. In order to interface the high-power devices of the SMPA with the digital CMOS blocks of the transmitter, a wideband RF CMOS driver capable to generate high voltage (HV) swings is required. In this way, digital signal processing can be directly applied

👥 作者与机构

David A. Calvillo-Cortes1, Mustafa Acar2, Mark P. van der Heijden2,