← 返回论文列表 📄 下载原文 PDF  ISSCC 2012 · 1.1
ISSCC 2012Session 1 · PLENARYPlenary

Flash Memory - the Great Disruptor! Eli Harari

⚡ 本页包含 AI 生成的分析内容,仅供参考

📋 论文概要

本文回顾了闪存技术在过去二十四年间通过19代技术缩放超越摩尔定律的发展历程,阐述了NAND闪存、系统闪存和多级单元(MLC)如何奠定250亿美元闪存产业的基础,并分析了闪存对消费电子和移动计算领域的颠覆性影响。

💡 主要创新点

重要性
发表年份
ISSCC 2012

🏷 关键词

闪存NAND多级单元

📄 原文摘要

1.0 Introduction In the past two decades Flash memory grew from a novelty technology to a powerful disruptor that has profoundly transformed consumer electronics and mobile computing. This was made possible through relentless cost reductions leveraging technology scaling through 19 generations of Flash memory in just 24 years, outpacing Moore’s Law. NAND Flash, System-Flash, and multilevel cells (MLC) were critical elements in establishing the foundations for today’s $25 billion Flash industry. Flash enabled, and in turn benefitted from new mega markets in digital consumer electronics, and more recently, from the ascendency of mobile phones and tablets as the ultimate convergence device for billions of consumers worldwide. The author began working in the semiconductor industry in the early 1970’s and participated in the growth of the non volatile memory (NVM) industry [1] , first as a device physicist, then as an entrepreneur and businessman. Section

👥 作者与机构

Co-Founder and Former CEO and Chairman (retired),

SanDisk Corporation, Milpitas, CA

分类:Plenary · 年份:ISSCC 2012