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ISSCC 2012Session 12 · MULTIMEDIA & COMMUNICATIONS SoCsDigital Processors32nm High-k Metal Gate

A 32nm High-k Metal Gate Application Processor with GHz Multi-Core CPU

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📋 论文概要

该论文介绍了三星的32nm高k金属栅极应用处理器Exynos,集成了双核或四核ARM-v7A架构CPU、2端口DRAM控制器以及多种多媒体加速器和连接模块,旨在满足移动应用的高数据处理吞吐量需求。

💡 主要创新点

工艺节点
32nm High-k Metal Gate
重要性
发表年份
ISSCC 2012

🏷 关键词

应用处理器多核CPU32nm工艺

📄 原文摘要

Dongsik Cho, Junghun Heo, Sunghoon Cho, Youngmin Shin, Sunghee Yun, Euiseok Kim, Ukrae Cho, Edward Pyo, Man Hyuk Park, Jae Cheol Son, Chinhyun Kim, Jeongnam Youn, Youngki Chung, Sungho Park, Seung Ho Hwang Samsung Electronics, Yongin, Korea Samsung’s next-generation 32nm dual/quad-core ExynosTM processor integrates 2 or 4 ARM-v7A architecture cores, a 2-port DRAM controller and numerous multimedia accelerators and connectivity blocks on the same die. It is an application processor (AP) designed to cover a wide variety of mobile applications and handle unprecedented data-processing throughput and multimedia performance, without sacrificing the battery life or exceeding the thermal power dissipation envelope. The architecture diagram is shown in Fig. 12.1.1 and the die photo for the quad-core configuration is shown in Fig. 12.1.7. The Exynos processor provides up to four CPU core configurations to adapt to

👥 作者与机构

Se-Hyun Yang, Seogjun Lee, Jae Young Lee, Jeonglae Cho, Hoi-Jin Lee,

分类:Digital Processors · 年份:ISSCC 2012