280GHz and 860GHz Image Sensors Using SchottkyBarrier Diodes in 0.13µm Digital CMOS

📋 论文概要

该论文提出在0.13µm标准数字CMOS工艺中利用肖特基势垒二极管实现280GHz和860GHz图像传感器，无需外部透镜即可进行亚毫米波成像。解决了传统太赫兹成像系统成本高、集成度低的问题，给出了噪声等效功率等关键性能指标。

💡 主要创新点

• 首次在标准数字CMOS工艺中实现无需外部透镜的280GHz和860GHz图像传感器。
• 利用肖特基势垒二极管实现宽带太赫兹探测，并给出了完整的噪声性能表征。

🏷 关键词

📄 原文摘要

sub-millimeter-wave imaging using solid-state circuits is gaining attention for security and medical applications. To lower cost and increase integration, MOSFETs in CMOS are being investigated for implementing broadband detectors [1-3]. However, neither measured noise-equivalent power (NEP) nor noise floor of the imager was given in [1]. Although NEP of 17pW/Hz1/2 was achieved at 650GHz in [2], an external lens was attached to the 65nm SOI CMOS chip. In [3], an NEP of 66pW/Hz1/2 was measured at 1.05THz using 65nm CMOS without a lens attached to the chip. Additionally, although the efforts reported in [1-3] realized an array, none demonstrated the image-array function. As an alternative, polysilicon-gate-separation (PGS) Schottky-barrier diodes (SBD) with

👥 作者与机构

Ruonan Han1,2, Yaming Zhang3, Youngwan Kim3, Dae Yeon Kim3,

Hisashi Shichijo3, Ehsan Afshari2, Kenneth O3 University of Florida, Gainesville, FL Cornell University, Ithaca, NY 3 University of Texas at Dallas, Richardson, TX 1 2 Millimeter and