⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文提出了一种基于CMOS工艺的0.28THz 4×4功率生成与波束控制阵列，解决了太赫兹频段低成本、室温工作的问题，实现了太赫兹信号的片上生成和波束扫描。
Up until recently, the terahertz frequency range (0.3 to 3THz) has been mostly addressed by high-mobility custom III-V processes, bulky and expensive nonlinear optics, or cryogenically cooled quantum cascade lasers. A low-cost room temperature alternative will enable a wide range of applications in security, defense, ultra-high-speed wireless communication, sensors, and biomedical imaging not currently accessible due to cost and size limitations. CMOS can potentially provide such a low-cost platform, but it requires novel techniques and architectures to generate, manipulate, radiate, and detect signals above transistor fmax, which are in the sub-THz frequency region in most of today’s nodes. An efficient power generation and radiation approach for THz applications was presented in [1], where the distributed active radiator (DAR) was shown to radiate directly out of a silicon chip with high conversion efficiency from DC to THz
Kaushik Sengupta, Ali Hajimiri
California Institute of Technology, Pasadena, CA