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ISSCC 2012Session 15 · mm-WAVE & THz TECHNIQUESmm-Wave65nm CMOS

A 1V 19.3dBm 79GHz Power Amplifier in 65nm CMOS

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📋 论文概要

本文提出一款基于变压器功率合成技术的79GHz功率放大器,采用65nm CMOS工艺实现。在1V供电下达到19.3dBm输出功率,有效解决了毫米波频段高输出功率与低功耗之间的矛盾。

💡 主要创新点

核心指标
19.3dBm Pout @ 79GHz, 1V supply
工艺节点
65nm CMOS
重要性
发表年份
ISSCC 2012

🏷 关键词

功率放大器毫米波变压器功率合成65nm CMOS79GHz

📄 原文摘要

For a highly integrated wireless system including on-chip antennas, high-outputpower power amplifiers (PA) are required to cover the desired transmission range. In order to achieve the output power level, power-combining techniques have gained more attention in recent years [1-5]. An efficient power-combining solution is essential since less DC power is needed for the same level of output power, and the difficulties of thermo-dissipation are thus relieved in a high-output-power PA. Transformer-based power combining is one of the common techniques, which can increase impedance-transformation ratio by increasing the number of input ports and results in a compact layout and reasonable loss [1-3, 5]. However, due to the short wavelength at mm-Wave frequencies, the behavior of a transformer departs far from that of a lumped element. Consequently, transformer combining has its limitations in combining signals arising from

👥 作者与机构

Kun-Yin Wang, Tao-Yao Chang, Chorng-Kuang Wang

National Taiwan University, Taipei, Taiwan

分类:mm-Wave · 年份:ISSCC 2012